| PART |
Description |
Maker |
| STN1HNC60 |
N-CHANNEL 600V 7 OHM 0.4A SOT-223 POWERMESH II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh?II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMeshII MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh⑩II MOSFET N沟道600V 7ohm - 0.4A - SOT - 223封装MOSFET的第二PowerMesh
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| BUK9107-55ATE |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426 晶体| MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426封装
TrenchPLUS logic level FET
|
NXP Semiconductors N.V.
Philips
|
| STN4NF03L 7267 STN4NF03 |
N-CHANNEL 30V - 0.039 OHM - 6.5A SOT-223 STRIPFET II POWER MOSFET
N-CHANNEL 30V - 0.039ohm - 6.5A SOT-223 STripFET⑩ II POWER MOSFET
From old datasheet system
N-CHANNEL 30V - 0.039 OHM - 6.5A SOT-223 STRIPFET II POWER MOSFET
N-CHANNEL 30V - 0.039ohm - 6.5A SOT-223 STripFET II POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| STN5PF02V |
P-channel 20V - 0.065 - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET
P-channel 20V - 0.065з - 4.2A - SOT-223 2.5V - Drive STripFET⑩ II Power MOSFET
P-channel 20V - 0.065蟹 - 4.2A - SOT-223 2.5V - Drive STripFET??II Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五（巴西）直| 20A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 3A条（丁）| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
| STN3NF06L STN3NF06L08 |
N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET
N-channel 60 V, 0.07 ヘ, 4 A, SOT-223 STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| IRFL110TR IRFL110 |
1.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
100V Single N-channel HexFET Power MOSFET in a SOT-223 Package
|
IR
|
| MGSF2N02E MGSF2N02ELT1 MGSF2N02ELT1G MGSF2N02ELT3 |
2.8 Amps, 20 Volts, N−Channel SOT−23 2.8 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB
2.8 Amps, 20 Volts, N-Channel SOT-23
2.8 Amps, 20 Volts, N−Channel SOT−23
Power MOSFET 2.8 Amps, 20 Volts
|
ONSEMI[ON Semiconductor]
|
| IRFL4105 IRFL4105TR |
3.7 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A)
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
| IRFL4315 IRFL4315TR |
150V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
SMPS MOSFET
|
IRF[International Rectifier]
|
